THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION

Zoya Nikonova, Oksana Nyebesnyuk, Alina Nikonova, Stanislav Ivanchikov, Alexander Zahoda

Анотація


For the production of silicon photo-transducers (PhT) the acquisition of epitaxial compositions (EC) with high resistivity of working layer [1]. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defects during epitaxial growth is produced by the quality of underlay preparation before that. Multiple research of relatively thin (less than 20-30 microns) epitaxial layers [2,3] demonstrated, that contamination or damages of underlay surface cause the development of defects of wrapping, counterparts, macroscopic protuberances in the growing layer. During inverted epitaxy there are no high requirements as for structural perfection of epitaxial layer as far as in PhT, produced on the basis of EC for which inverted silicon structures (ISS) serve with the working layer of mono-crystal substrate. Therefore in inverted epitaxy it is the problem of the development in the course of defects growth not in epitaxial layer, but in underlay, that becomes the major one. The processes of the development of defects in underlay in the course of growing thick (approximately 300 microns) epitaxial layer are scarcely researched by now. Scientists sustained the idea that when using dislocation-free underlays for growing in the working layer of ISS there are dislocations with the density of 103 sm-2 and more. Thus, investigation of the factors that determine the development of dislocations in underlay in the process of epitaxy, has now gained great practical value [4-7].

Ключові слова


silicon photo-transducers; dislocations; defects; swirl-defects; inverted silicon structures; epitaxial compositions

Повний текст:

PDF

Посилання


Lin Jyi-Tsong. (2010), A novel planar-type body connected FinFET device fabricated by self-align isolation-last process, Solid-State and Integrated Circuit Technology. РР. 1235 - 1237.

V.V. Odinokov, G.Ya. Pavlov. (2011), New processing equipment for innovative technologies micro, nano - and radio electronics, Technology and de-signing in the electronic equipment. v.3. PP. 41 - 43.

D.I. Levinson, A. Nikonov, O. Nebesnyuk. (2013), Modeling the distribution of impurities in the preparation of heavily instrumental silicon layers using high-energy treatment, Materialyi mezhdunarodnoy nauchnoy konferentsii «Scientific researches and their practical application. Modern state and ways of development 2013» v. J21310.

Green M. A. (2002), Third generation photovoltaics: solar cells for 2020 and beyond, Physica. Vol. E 14. РP. 65 - 70.

Brown A. S., Green M. A. (2001), Limiting efficiency of multiple band solar cells: an overview, Proceedings of the 17th European Photovoltaic Solar Energy Conference. PP. 246 - 249.

Maronchuk I., Minailov A., Andronova E. et al. (2004), Quantum dots PV-cells obtained by liquid phase epitaxy, Proceedings of the 19th European Photovoltaic Solar Energy Conference. PP. 352 - 354.

R.R.King, D.C.Law, C.M.Fetzez, R.A.Sherif, K.M. Edmondson, S. Kurtz. (2005) Pathways to 40% Efficient Concentrator Photovoltaics [Proceedings 20th European Photovoltaic Solar Energy Conference], Conversion. Osaka, Japan.


Посилання

  • Поки немає зовнішніх посилань.